Odyssey successfully built high-voltage vertical GaN* power devices which meet 1200V rating and is now building samples for customers in industrial motor, renewable energy and electric vehicle market segments.

With the industry’s strongest vertical GaN IP portfolio, Odyssey is delivering 10X smaller die size, higher performance, and cost levels unattainable by silicon carbide.

Odyssey seeks to disrupt the 40% CAGR, $5B+ silicon carbide market with greater than 40% target gross margins. Megatrends drive the need for high-voltage vertical GaN.

*GaN: Gallium Nitride

Odyssey Semi's focuses on high voltage applications for their power semiconductors and GaN technology, and as a result are positioning themselves to compete in an extremely high-growth industry: electric vehicles.

Odyssey's technology extends the range and improves the performance of electric vehicles. Nearly 10 million EVs are projected to be sold worldwide this year, and that number is projected to rise to over 13 million in 2025 as per S&P Global Market Intelligence.

Odyssey Semi is positioning its GaN technology to take on the silicon carbide market, a market that is currently worth over $5 billion and has an impressive 40% Compound Annual Growth Rate (CAGR).

• High growth megatrends of Electrification and Sustainability create market opportunity where silicon and silicon carbide cannot deliver

• Vertical GaN delivers the performance and economics needed for continuous, high-margin growth

• Odyssey Semi is uniquely positioned to capture significant market-share

Semiconductor companies typically fall into one of two categories: fabless and IDM (Integrated Device Manufacturer). A fabless semiconductor company will outsource the manufacturing of their chips to a 3rd party fabrication plant. However an IDM designs, manufactures and sells their products. 

Odyssey Semiconductor is an IDM: their manufacturing process is their IP and their product. By owning and operating its own fabrication facility, it is able to be much more responsive to the needs of its customers and add significant value in the process. 

This internal foundry gives the company a comparative advantage in its view, as it can adapt to the ever-changing needs of its clientele, develop products for a wider array of customer specs, and ultimately scale more efficiently.

• Completed 650 and 1200 volt vertical GaN product sample fabrication as planned in Q4 2022

• Vertical GaN sample shipments delivered to two lead customers in Q1 2023

• Initial product development agreements with customers expected by the end of Q2 2023

• Received $2.35M in funding from its Chairman on December 28, 2022.

• Interested customer roster includes top automotive OEMs, automotive Tier 1's, renewable energy systems providers and industrial power supply and motor companies.

  • All customer engagement has been a result of customers reading its news and inquiring without Odyssey needing to proactively reach out. This demonstrates the strength of its products and their fit with customers AND its marketing machine

• Maintain a lean monthly burn while making critical investments and hires to keep the product development moving forward.

Check out Odyssey Semiconductor CEO Mark Davidson speaking at the Emerging Growth Conference on May 3rd, 2023.

Odyssey Semiconductor specializes in the fabrication, research and development and sales of power semiconductors. While most everyone knows about semiconductors as the chips that power our everyday lives and are in essentially every electronic device that we use, not many people know about power semiconductors.

Power semiconductors are efficient devices that can withstand high voltage and current with lesser losses. From acting as a switch in power electronics to controlling the speed of a fan, power semiconductors are reliable devices with high power ratings. They are regularly used in applications as vital as industrial motors, electric vehicles and renewable energy.

Odyssey Semiconductor seeks to add value through both consultative R&D services as well as its own foundry services for power semiconductors.

ODYSSEY'S AREA OF FOCUS

Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconductor. With higher breakdown strength, faster switching speed and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.

Odyssey Semiconductor believes that GaN is the future of high-voltage transistors.  However, GaN processing technology has not produced a viable GaN high voltage switching transistor operating above 1,000 V. Current devices are largely horizontal conduction devices based on radio frequency (RF) designs modified to operate at high voltage. These designs are not scalable beyond 1,000 V for operating voltage, which limits their use to low-voltage consumer electronics applications.

Odyssey Semiconductor’s unique GaN processing technology allows for the realization of vertical current conduction GaN devices which extends application voltages from 1,000 V to over 10,000 V, allowing GaN power switching devices to extend well beyond the consumer electronics application space and into more demanding applications such as electric vehicles, industrial motor control, and energy grid applications.

Vertical-Conduction over Horizontal-Conduction Devices

Gallium nitride (GaN) based power-switching transistors are superior to their silicon (Si) and silicon carbide (SiC) counterparts due to materials properties which allow for significantly smaller wafer area devices with equivalent breakdown voltage, on-resistance, and current handling capability to be realized.
  

Wide-bandgap semiconductors are semiconductor materials which have a larger band gap than conventional semiconductors. They typically have bandgap around or over 2 eV, unlike more traditional semiconductors with a bandgap range of around 0.6-1.5 eV. These wider bandgap materials allow power electronic components to be smaller, faster, more reliable and more efficient than conventional semiconductors.

GaN vs SiC - Differences Between Wide Bandgap Semiconductors

Gallium nitride (GaN) and silicon carbide (SiC) are two materials typically used for wide bandgap semiconductors, but GaN has significant advantages as a semiconductor material. GaN devices have the same current handling capacity, breakdown voltage, and on-resistance as SiC devices, but take up 10x less wafer areas. The devices are lower cost to produce as they make more area-efficient use of wafers. Importantly, the devices have ~10X less capacitance, which greatly increases the switching speed of converter circuits using these parts, allowing for much smaller power systems. 

In short, GaN’s more die per wafer are easier to scale, have lower costs and higher performance, leading to more value for Odyssey Semi’s customers.

Comparison of specific on-resistance limits at breakdown voltages from 10-10,000 V of Si, SiC, and GaN. 

GaN devices have the same current handling capacity, breakdown voltage, and on-resistance as SiC devices, but take up 10x less wafer areas. The devices are cheaper to produce as they make more area-efficient use of wafers. Importantly, the devices have ~10X less capacitance, which greatly increases the switching speed of converter circuits using these parts.

For the same amount of material as a SiC device, you could get nearly 10x the speed. Or for 1/10th the material of a SiC wafer, you could get about the same speed.

"Odyssey Semi set an aggressive goal to deliver vertical GaN product samples in Q1 2023. Now that it is delivered product samples to lead customers, its focused in Q2 2023 on delivery of samples to additional customers and signing product development agreements with customers, which will lead to large-scale commercialization," said Mark Davidson, Odyssey's Chief Executive Officer. "Lead customers have collaborated along the way and have validated the performance metrics expected from vertical GaN for power applications. There is no doubt that these products will be successful in the market".

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